1999. 11. 30 1/3 semiconductor technical data KTC1008 epitaxial planar npn transistor revision no : 0 voltage regulator, relay, ramp driver, industrial use features high voltage : v ceo =60v(min.). high current : i c (max.)=1a. high transition frequency : f t =150mhz(typ.). wide area of safe operation. complementary to kta708. maximum ratings (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5 v collector current dc i c 1 a pulse i cp 2 collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =50v, i e =0 - - 100 na emitter cut-off current i ebo v eb =4v, i c =0 - - 100 na dc current gain h fe (1) v ce =2v, i c =50ma 100 - 320 h fe (2) v ce =2v, i c =1a 30 - - collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 60 - - v collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - 0.15 0.5 v base-emitter saturation voltage v be(sat) i c =500ma, i b =50ma - 0.85 1.2 v transition frequency f t v ce =10v, i c =50ma - 150 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 12 - pf note : h fe (1) classification y:100 200, gr:160 320
1999. 11. 30 2/3 KTC1008 revision no : 0 collector output capacitance 3 ob 100 1 collector-base voltage v (v) cb c - v dc current gain h fe 1 collector current i (ma) c h - i f - i c collector current i (ma) 1 3 10 100 t transition frequency f (mhz) 10 c collector current i (ma) 0 0 collector-emitter voltage v (v) ce ce c i - v collector-emitter saturation ce(sat) 0.01 300 100 10 5 collector current i (ma) c v - i 24681012 200 400 600 800 1k 1 0 ma 8ma 6ma 4ma 3ma 2ma 1ma i =0ma b b i =0ma 2ma 4ma 20ma 30m a 50ma 1k 800 600 400 200 1.2 1.0 0.8 0.6 0.4 0.2 i - v cce ce collector-emitter voltage v (v) 0 0 collector current i (ma) c 6ma 10ma fe c 3 10 30 100 300 1k 3k 10 30 50 100 300 500 1k common emitter ta=25 c v =2v ce ob cb c (pf) 3 5 10 30 50 100 5 10 30 50 common emitter f=1mhz ta=25 c tc 300 30 30 50 100 300 common emitter ta=25 c v =10v ce ce(sat) c voltage v (v) 1k 3k 30 0.03 0.05 0.1 0.3 0.5 1 3 5 common emitter ta=25 c i /i =1 0 c b
1999. 11. 30 3/3 KTC1008 revision no : 0 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta safe operating area ce collector-emitter voltage v (v) 0.5 1 3 10 0.01 c collector current i (a) 30 100 550 0.005 0.03 0.05 0.1 0.3 0.5 1 3 5 i cp c i max. dc operation 1 msec 10m se c 100m se c 1sec p (mw) 20 40 60 80 100 120 140 160 200 400 600 800 1k 1.2k 1pulse
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